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Technische Details GAN039-650NTBJ Nexperia
Description: GAN CASCODE FETS, Packaging: Tape & Reel (TR), Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58.5A (Ta), Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V, Power Dissipation (Max): 250W (Ta), Vgs(th) (Max) @ Id: 4.6V @ 1mA, Supplier Device Package: CCPAK1212i, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 400 V.
Weitere Produktangebote GAN039-650NTBJ nach Preis ab 13.53 EUR bis 45.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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GAN039-650NTBJ | Nexperia |
 Trans MOSFET N-CH GaN 650V 58.5A 12-Pin CCPAK EP |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN039-650NTBJ | Nexperia |
GaN FETs GAN039-650NTB/SOT8005/CCPAK121 |
auf Bestellung 536 Stücke: Lieferzeit 10-14 Tag (e) |
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GAN039-650NTBJ | NEXPERIA |
Description: NEXPERIA - GAN039-650NTBJ - Galliumnitrid (GaN)-Transistor, 650 V, 58.5 A, 0.039 ohm, 26 nC, CCPAK1212i, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 58.5A hazardous: false rohsPhthalatesCompliant: YES isCanonical: N usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 26nC Anzahl der Pins: 12Pin(s) productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.039ohm SVHC: Lead (25-Jun-2025) |
auf Bestellung 798 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN039-650NTBJ | Nexperia USA Inc. |
Description: GAN CASCODE FETS Packaging: Cut Tape (CT) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58.5A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V Power Dissipation (Max): 250W (Ta) Vgs(th) (Max) @ Id: 4.6V @ 1mA Supplier Device Package: CCPAK1212i Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 400 V |
auf Bestellung 533 Stücke: Lieferzeit 10-14 Tag (e) |
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GAN039-650NTBJ | NEXPERIA |
Description: NEXPERIA - GAN039-650NTBJ - Galliumnitrid (GaN)-Transistor, 650 V, 58.5 A, 0.039 ohm, 26 nC, CCPAK1212i, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 58.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 26nC Bauform - Transistor: CCPAK1212i Anzahl der Pins: 12Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.039ohm SVHC: Lead (25-Jun-2025) |
auf Bestellung 798 Stücke: Lieferzeit 14-21 Tag (e) |
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| GAN039-650NTBJ |
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Hersteller: Nexperia
Trans MOSFET N-CH GaN 650V 58.5A 12-Pin CCPAK EP
Trans MOSFET N-CH GaN 650V 58.5A 12-Pin CCPAK EP
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 24.49 EUR |
| GAN039-650NTBJ |
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Hersteller: Nexperia
GaN FETs GAN039-650NTB/SOT8005/CCPAK121
GaN FETs GAN039-650NTB/SOT8005/CCPAK121
auf Bestellung 536 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.23 EUR |
| 10+ | 19.12 EUR |
| 100+ | 15.93 EUR |
| 1000+ | 13.53 EUR |
| GAN039-650NTBJ |
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Hersteller: NEXPERIA
Description: NEXPERIA - GAN039-650NTBJ - Galliumnitrid (GaN)-Transistor, 650 V, 58.5 A, 0.039 ohm, 26 nC, CCPAK1212i, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 58.5A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 26nC
Anzahl der Pins: 12Pin(s)
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.039ohm
SVHC: Lead (25-Jun-2025)
Description: NEXPERIA - GAN039-650NTBJ - Galliumnitrid (GaN)-Transistor, 650 V, 58.5 A, 0.039 ohm, 26 nC, CCPAK1212i, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 58.5A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 26nC
Anzahl der Pins: 12Pin(s)
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.039ohm
SVHC: Lead (25-Jun-2025)
auf Bestellung 798 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 27.36 EUR |
| 50+ | 25.87 EUR |
| 100+ | 24.4 EUR |
| 250+ | 23.91 EUR |
| GAN039-650NTBJ |
|
Hersteller: Nexperia USA Inc.
Description: GAN CASCODE FETS
Packaging: Cut Tape (CT)
Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.5A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V
Power Dissipation (Max): 250W (Ta)
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: CCPAK1212i
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 400 V
Description: GAN CASCODE FETS
Packaging: Cut Tape (CT)
Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.5A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V
Power Dissipation (Max): 250W (Ta)
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: CCPAK1212i
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 400 V
auf Bestellung 533 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.75 EUR |
| 10+ | 19.48 EUR |
| 100+ | 16.23 EUR |
| GAN039-650NTBJ |
|
Hersteller: NEXPERIA
Description: NEXPERIA - GAN039-650NTBJ - Galliumnitrid (GaN)-Transistor, 650 V, 58.5 A, 0.039 ohm, 26 nC, CCPAK1212i, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 58.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 26nC
Bauform - Transistor: CCPAK1212i
Anzahl der Pins: 12Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.039ohm
SVHC: Lead (25-Jun-2025)
Description: NEXPERIA - GAN039-650NTBJ - Galliumnitrid (GaN)-Transistor, 650 V, 58.5 A, 0.039 ohm, 26 nC, CCPAK1212i, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 58.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 26nC
Bauform - Transistor: CCPAK1212i
Anzahl der Pins: 12Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.039ohm
SVHC: Lead (25-Jun-2025)
auf Bestellung 798 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 45.43 EUR |
| 7+ | 35.93 EUR |
| 10+ | 27.36 EUR |
| 50+ | 25.87 EUR |
| 100+ | 24.4 EUR |
| 250+ | 23.91 EUR |