auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 20.35 EUR |
Produktrezensionen
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Technische Details GAN039-650NTBJ Nexperia
Description: GAN CASCODE FETS, Packaging: Tape & Reel (TR), Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58.5A (Ta), Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V, Power Dissipation (Max): 250W (Ta), Vgs(th) (Max) @ Id: 4.6V @ 1mA, Supplier Device Package: CCPAK1212i, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 400 V.
Weitere Produktangebote GAN039-650NTBJ nach Preis ab 11.9 EUR bis 22.92 EUR
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GAN039-650NTBJ | Hersteller : Nexperia |
 Trans MOSFET N-CH GaN 650V 58.5A 12-Pin CCPAK EP |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN039-650NTBJ | Hersteller : Nexperia USA Inc. |
Description: GAN CASCODE FETS Packaging: Cut Tape (CT) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58.5A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V Power Dissipation (Max): 250W (Ta) Vgs(th) (Max) @ Id: 4.6V @ 1mA Supplier Device Package: CCPAK1212i Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 400 V |
auf Bestellung 924 Stücke: Lieferzeit 10-14 Tag (e) |
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GAN039-650NTBJ | Hersteller : Nexperia | GaN FETs 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package |
auf Bestellung 790 Stücke: Lieferzeit 10-14 Tag (e) |
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GAN039-650NTBJ | Hersteller : NEXPERIA |
Description: NEXPERIA - GAN039-650NTBJ - Galliumnitrid (GaN)-Transistor, 650 V, 58.5 A, 0.039 ohm, 26 nC, CCPAK1212i, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 58.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 26nC Bauform - Transistor: CCPAK1212i Anzahl der Pins: 12Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.039ohm SVHC: Lead (21-Jan-2025) |
auf Bestellung 829 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN039-650NTBJ | Hersteller : NEXPERIA |
Description: NEXPERIA - GAN039-650NTBJ - Galliumnitrid (GaN)-Transistor, 650 V, 58.5 A, 0.039 ohm, 26 nC, CCPAK1212i, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 58.5A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 26nC Anzahl der Pins: 12Pin(s) productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.039ohm SVHC: Lead (21-Jan-2025) |
auf Bestellung 829 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN039-650NTBJ | Hersteller : Nexperia |
Trans MOSFET N-CH GaN 650V 58.5A 12-Pin CCPAK EP |
Produkt ist nicht verfügbar |
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GAN039-650NTBJ | Hersteller : Nexperia USA Inc. |
Description: GAN CASCODE FETS Packaging: Tape & Reel (TR) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58.5A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V Power Dissipation (Max): 250W (Ta) Vgs(th) (Max) @ Id: 4.6V @ 1mA Supplier Device Package: CCPAK1212i Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 400 V |
Produkt ist nicht verfügbar |