GAN039-650NTBZ Nexperia
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 20.31 EUR |
| 10+ | 17.74 EUR |
| 50+ | 17.65 EUR |
| 100+ | 15.35 EUR |
| 500+ | 14.33 EUR |
| 1000+ | 13.32 EUR |
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Technische Details GAN039-650NTBZ Nexperia
Description: 650 V, 33 MOHM GALLIUM NITRIDE (, Packaging: Tape & Reel (TR), Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58.5A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.6V @ 1mA, Supplier Device Package: CCPAK1212i, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 400 V.
Weitere Produktangebote GAN039-650NTBZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| GAN039-650NTBZ | Hersteller : NEXPERIA |
 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package |
Produkt ist nicht verfügbar |
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| GAN039-650NTBZ | Hersteller : NEXPERIA |
650 V, 33 mOhm Gallium Nitride GaN FET |
Produkt ist nicht verfügbar |
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GAN039-650NTBZ | Hersteller : Nexperia |
Trans MOSFET N-CH GaN 650V 60A T/R |
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GAN039-650NTBZ | Hersteller : Nexperia |
Trans MOSFET N-CH GaN 650V 60A T/R |
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GAN039-650NTBZ | Hersteller : Nexperia USA Inc. |
Description: 650 V, 33 MOHM GALLIUM NITRIDE ( Packaging: Tape & Reel (TR) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58.5A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 1mA Supplier Device Package: CCPAK1212i Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 400 V |
Produkt ist nicht verfügbar |
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GAN039-650NTBZ | Hersteller : Nexperia USA Inc. |
Description: 650 V, 33 MOHM GALLIUM NITRIDE ( Packaging: Cut Tape (CT) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58.5A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 1mA Supplier Device Package: CCPAK1212i Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 400 V |
Produkt ist nicht verfügbar |