GAN063-650WSAQ Nexperia
| Anzahl | Privatkunde |
|---|---|
| 7+ | 26.16 EUR |
| 10+ | 19.9 EUR |
| 120+ | 17.17 EUR |
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Technische Details GAN063-650WSAQ Nexperia
Description: GANFET N-CH 650V 34.5A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: GaNFET (Cascode Gallium Nitride FET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V, Power Dissipation (Max): 143W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V.
Weitere Produktangebote GAN063-650WSAQ nach Preis ab 16.53 EUR bis 56.81 EUR
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GAN063-650WSAQ | Nexperia |
 Trans MOSFET N-CH GaN 650V 34.5A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 260 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN063-650WSAQ | Nexperia USA Inc. |
Description: GANFET N-CH 650V 34.5A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V |
auf Bestellung 547 Stücke: Lieferzeit 10-14 Tag (e) |
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GAN063-650WSAQ | NEXPERIA |
Description: NEXPERIA - GAN063-650WSAQ - Galliumnitrid (GaN)-Transistor, Gan FET, 650 V, 34.5 A, 0.06 ohm, 15 nC, TP-247, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 34.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 15nC Bauform - Transistor: TP-247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN063-650WSAQ | Nexperia |
GaN FETs TO247 650V 34.5A GAN FET |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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GAN063-650WSAQ | NXP |
Trans MOSFET N-CH GaN 650V 34.5A 3-Pin(3+Tab) TO-247 GAN063-650WSAQ TGAN063-650WSAQ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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| GAN063-650WSAQ |
|
Hersteller: Nexperia
Trans MOSFET N-CH GaN 650V 34.5A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH GaN 650V 34.5A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 26.16 EUR |
| 10+ | 19.47 EUR |
| 120+ | 16.53 EUR |
| GAN063-650WSAQ |
|
Hersteller: Nexperia USA Inc.
Description: GANFET N-CH 650V 34.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Description: GANFET N-CH 650V 34.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 547 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 29.45 EUR |
| 10+ | 27.26 EUR |
| 300+ | 26.41 EUR |
| GAN063-650WSAQ |
|
Hersteller: NEXPERIA
Description: NEXPERIA - GAN063-650WSAQ - Galliumnitrid (GaN)-Transistor, Gan FET, 650 V, 34.5 A, 0.06 ohm, 15 nC, TP-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 34.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 15nC
Bauform - Transistor: TP-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.06ohm
SVHC: No SVHC (27-Jun-2024)
Description: NEXPERIA - GAN063-650WSAQ - Galliumnitrid (GaN)-Transistor, Gan FET, 650 V, 34.5 A, 0.06 ohm, 15 nC, TP-247, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 34.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 15nC
Bauform - Transistor: TP-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.06ohm
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 31.26 EUR |
| 10+ | 27.74 EUR |
| GAN063-650WSAQ |
|
Hersteller: Nexperia
GaN FETs TO247 650V 34.5A GAN FET
GaN FETs TO247 650V 34.5A GAN FET
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 45.14 EUR |
| 10+ | 38.14 EUR |
| GAN063-650WSAQ |
|
Hersteller: NXP
Trans MOSFET N-CH GaN 650V 34.5A 3-Pin(3+Tab) TO-247 GAN063-650WSAQ TGAN063-650WSAQ
Anzahl je Verpackung: 1 Stücke
Trans MOSFET N-CH GaN 650V 34.5A 3-Pin(3+Tab) TO-247 GAN063-650WSAQ TGAN063-650WSAQ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 56.81 EUR |