| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.89 EUR |
| 10+ | 10.12 EUR |
| 100+ | 7.39 EUR |
| 500+ | 7.22 EUR |
| 1000+ | 6.62 EUR |
| 2500+ | 6.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GAN080-650EBEZ Nexperia
Description: 650 V, 80 MOHM GALLIUM NITRIDE (, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 6V, Power Dissipation (Max): 240W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 30.7mA, Supplier Device Package: DFN8080-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -6V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 400 V.
Weitere Produktangebote GAN080-650EBEZ nach Preis ab 7.35 EUR bis 22.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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GAN080-650EBEZ | Nexperia USA Inc. |
 Description: 650 V, 80 MOHM GALLIUM NITRIDE (Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 6V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 30.7mA Supplier Device Package: DFN8080-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -6V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 400 V |
auf Bestellung 2052 Stücke: Lieferzeit 10-14 Tag (e) |
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GAN080-650EBEZ | NEXPERIA |
Description: NEXPERIA - GAN080-650EBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.06 ohm, 6.2 nC, DFN8080, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 6.2nC Bauform - Transistor: DFN8080 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 3647 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN080-650EBEZ | NEXPERIA |
Description: NEXPERIA - GAN080-650EBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.06 ohm, 6.2 nC, DFN8080, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 6.2nC Bauform - Transistor: DFN8080 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 3647 Stücke: Lieferzeit 14-21 Tag (e) |
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| GAN080-650EBEZ |
|
Hersteller: Nexperia USA Inc.
Description: 650 V, 80 MOHM GALLIUM NITRIDE (
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 6V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 30.7mA
Supplier Device Package: DFN8080-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -6V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 400 V
Description: 650 V, 80 MOHM GALLIUM NITRIDE (
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 6V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 30.7mA
Supplier Device Package: DFN8080-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -6V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 400 V
auf Bestellung 2052 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.18 EUR |
| 10+ | 10.31 EUR |
| 100+ | 7.54 EUR |
| 500+ | 7.35 EUR |
| GAN080-650EBEZ |
|
Hersteller: NEXPERIA
Description: NEXPERIA - GAN080-650EBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.06 ohm, 6.2 nC, DFN8080, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 6.2nC
Bauform - Transistor: DFN8080
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.06ohm
SVHC: No SVHC (25-Jun-2025)
Description: NEXPERIA - GAN080-650EBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.06 ohm, 6.2 nC, DFN8080, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 6.2nC
Bauform - Transistor: DFN8080
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.06ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 3647 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 22.44 EUR |
| 14+ | 17.49 EUR |
| 17+ | 13.07 EUR |
| 50+ | 11.52 EUR |
| 100+ | 9.98 EUR |
| 250+ | 9.79 EUR |
| GAN080-650EBEZ |
|
Hersteller: NEXPERIA
Description: NEXPERIA - GAN080-650EBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.06 ohm, 6.2 nC, DFN8080, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 6.2nC
Bauform - Transistor: DFN8080
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.06ohm
SVHC: No SVHC (25-Jun-2025)
Description: NEXPERIA - GAN080-650EBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.06 ohm, 6.2 nC, DFN8080, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 29A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 6.2nC
Bauform - Transistor: DFN8080
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.06ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 3647 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 22.44 EUR |
| 14+ | 17.49 EUR |
| 17+ | 13.07 EUR |
| 50+ | 11.52 EUR |
| 100+ | 9.98 EUR |
| 250+ | 9.79 EUR |