GAN140-650EBEZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: 650 V, 140 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 113W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: DFN8080-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
auf Bestellung 2461 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 10.75 EUR |
| 10+ | 9.21 EUR |
| 100+ | 7.68 EUR |
| 500+ | 6.78 EUR |
| 1000+ | 6.1 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GAN140-650EBEZ Nexperia USA Inc.
Description: 650 V, 140 MOHM GALLIUM NITRIDE, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V, Power Dissipation (Max): 113W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 17.2mA, Supplier Device Package: DFN8080-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -1.4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V.
Weitere Produktangebote GAN140-650EBEZ nach Preis ab 7.2 EUR bis 11.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
GAN140-650EBEZ | Hersteller : Nexperia |
MOSFET MOS DISCRETES |
auf Bestellung 2292 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||
| GAN140-650EBEZ | Hersteller : NEXPERIA |
Trans MOSFET N-CH GaN 650V 17A 8-Pin DFN EP T/R |
Produkt ist nicht verfügbar |
||||||||||||||||
| GAN140-650EBEZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 32A Power dissipation: 113W Case: DFN8080-8 Gate-source voltage: -1.4...7V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.5nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
|
|
GAN140-650EBEZ | Hersteller : Nexperia USA Inc. |
Description: 650 V, 140 MOHM GALLIUM NITRIDE Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V Power Dissipation (Max): 113W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 17.2mA Supplier Device Package: DFN8080-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V |
Produkt ist nicht verfügbar |
|||||||||||||||
| GAN140-650EBEZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 32A Power dissipation: 113W Case: DFN8080-8 Gate-source voltage: -1.4...7V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.5nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |