| Anzahl | Preis |
|---|---|
| 1+ | 12.23 EUR |
| 10+ | 8.31 EUR |
| 50+ | 8.03 EUR |
| 100+ | 6.37 EUR |
| 200+ | 6.35 EUR |
| 1000+ | 6.25 EUR |
| 2500+ | 3.52 EUR |
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Technische Details GAN140-650EBEZ Nexperia
Description: 650 V, 140 MOHM GALLIUM NITRIDE, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V, Power Dissipation (Max): 113W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 17.2mA, Supplier Device Package: DFN8080-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -1.4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V.
Weitere Produktangebote GAN140-650EBEZ nach Preis ab 6.36 EUR bis 12.92 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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GAN140-650EBEZ | Hersteller : Nexperia USA Inc. |
 Description: 650 V, 140 MOHM GALLIUM NITRIDEPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 17.2mA Supplier Device Package: DFN8080-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V |
auf Bestellung 2365 Stücke: Lieferzeit 10-14 Tag (e) |
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GAN140-650EBEZ | Hersteller : NEXPERIA |
Description: NEXPERIA - GAN140-650EBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 17 A, 0.106 ohm, 3.5 nC, DFN8080, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 3.5nC Bauform - Transistor: DFN8080 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.106ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 4773 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN140-650EBEZ | Hersteller : NEXPERIA |
Description: NEXPERIA - GAN140-650EBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 17 A, 0.106 ohm, 3.5 nC, DFN8080, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 3.5nC Bauform - Transistor: DFN8080 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.106ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 4773 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN140-650EBEZ | Hersteller : Nexperia USA Inc. |
Description: 650 V, 140 MOHM GALLIUM NITRIDE Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 17.2mA Supplier Device Package: DFN8080-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V |
Produkt ist nicht verfügbar |
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| GAN140-650EBEZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 32A Case: DFN8080-8 Gate-source voltage: -1.4...7V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.5nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 113W |
Produkt ist nicht verfügbar |