Produktrezensionen
Produktbewertung abgeben
Technische Details GAN140-650FBEZ Nexperia
Description: 650 V, 140 MOHM GALLIUM NITRIDE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V, Power Dissipation (Max): 113W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 17.2mA, Supplier Device Package: DFN5060-5, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -1.4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V.
Weitere Produktangebote GAN140-650FBEZ nach Preis ab 3.69 EUR bis 18.24 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GAN140-650FBEZ | Nexperia |
 Trans MOSFET N-CH GaN 650V 17A 8-Pin DFN EP T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
GAN140-650FBEZ | Nexperia |
GaN FETs GAN140-650FBE/SOT8075/DFN5060- |
auf Bestellung 91 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
GAN140-650FBEZ | Nexperia USA Inc. |
Description: 650 V, 140 MOHM GALLIUM NITRIDE Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 17.2mA Supplier Device Package: DFN5060-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V |
auf Bestellung 1942 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
GAN140-650FBEZ | NEXPERIA |
Description: NEXPERIA - GAN140-650FBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 17 A, 0.106 ohm, 3.5 nC, DFN5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 3.5nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: DFN5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.106ohm |
auf Bestellung 290 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
GAN140-650FBEZ | NEXPERIA |
Description: NEXPERIA - GAN140-650FBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 17 A, 0.106 ohm, 3.5 nC, DFN5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Ladung, typ.: 3.5nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: DFN5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.106ohm |
auf Bestellung 290 Stücke: Lieferzeit 14-21 Tag (e) |
|
| GAN140-650FBEZ |
|
Hersteller: Nexperia
Trans MOSFET N-CH GaN 650V 17A 8-Pin DFN EP T/R
Trans MOSFET N-CH GaN 650V 17A 8-Pin DFN EP T/R
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 3.69 EUR |
| GAN140-650FBEZ |
|
Hersteller: Nexperia
GaN FETs GAN140-650FBE/SOT8075/DFN5060-
GaN FETs GAN140-650FBE/SOT8075/DFN5060-
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.7 EUR |
| 10+ | 7.58 EUR |
| 100+ | 6.22 EUR |
| 500+ | 5.59 EUR |
| 1000+ | 4.96 EUR |
| 2500+ | 3.92 EUR |
| GAN140-650FBEZ |
|
Hersteller: Nexperia USA Inc.
Description: 650 V, 140 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: DFN5060-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Description: 650 V, 140 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: DFN5060-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
auf Bestellung 1942 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.61 EUR |
| 10+ | 9.9 EUR |
| 50+ | 7.88 EUR |
| 100+ | 7.24 EUR |
| 500+ | 7.01 EUR |
| GAN140-650FBEZ |
|
Hersteller: NEXPERIA
Description: NEXPERIA - GAN140-650FBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 17 A, 0.106 ohm, 3.5 nC, DFN5060, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 17A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 3.5nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: DFN5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.106ohm
Description: NEXPERIA - GAN140-650FBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 17 A, 0.106 ohm, 3.5 nC, DFN5060, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 17A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 3.5nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: DFN5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.106ohm
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 18.24 EUR |
| 21+ | 11.09 EUR |
| 100+ | 7.54 EUR |
| GAN140-650FBEZ |
|
Hersteller: NEXPERIA
Description: NEXPERIA - GAN140-650FBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 17 A, 0.106 ohm, 3.5 nC, DFN5060, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 17A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Ladung, typ.: 3.5nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: DFN5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.106ohm
Description: NEXPERIA - GAN140-650FBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 17 A, 0.106 ohm, 3.5 nC, DFN5060, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 17A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Ladung, typ.: 3.5nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: DFN5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.106ohm
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 18.24 EUR |
| 21+ | 11.09 EUR |
| 100+ | 7.54 EUR |