GAN190-650EBEZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: 650 V, 190 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: DFN8080-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
auf Bestellung 1837 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.1 EUR |
| 10+ | 4.97 EUR |
| 100+ | 4.89 EUR |
| 500+ | 4.82 EUR |
| 1000+ | 4.45 EUR |
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Technische Details GAN190-650EBEZ Nexperia USA Inc.
Description: 650 V, 190 MOHM GALLIUM NITRIDE, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 12.2mA, Supplier Device Package: DFN8080-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -1.4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V.
Weitere Produktangebote GAN190-650EBEZ nach Preis ab 4.19 EUR bis 6.02 EUR
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GAN190-650EBEZ | Hersteller : Nexperia |
GaN FETs The factory is currently not accepting orders for this product. |
auf Bestellung 1140 Stücke: Lieferzeit 10-14 Tag (e) |
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GAN190-650EBEZ | Hersteller : NEXPERIA |
Description: NEXPERIA - GAN190-650EBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 11.5 A, 0.138 ohm, 2.8 nC, DFN8080, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 11.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 2.8nC Bauform - Transistor: DFN8080 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Drain-Source-Durchgangswiderstand: 0.138ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 2142 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN190-650EBEZ | Hersteller : NEXPERIA |
Description: NEXPERIA - GAN190-650EBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 11.5 A, 0.138 ohm, 2.8 nC, DFN8080, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 11.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 2.8nC Bauform - Transistor: DFN8080 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Drain-Source-Durchgangswiderstand: 0.138ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 2142 Stücke: Lieferzeit 14-21 Tag (e) |
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| GAN190-650EBEZ | Hersteller : NEXPERIA |
650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package / SOT8074 |
Produkt ist nicht verfügbar |
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GAN190-650EBEZ | Hersteller : Nexperia USA Inc. |
Description: 650 V, 190 MOHM GALLIUM NITRIDE Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Supplier Device Package: DFN8080-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V |
Produkt ist nicht verfügbar |
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| GAN190-650EBEZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 20.5A Case: DFN8080-8 Gate-source voltage: -1.4...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.8nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 125W |
Produkt ist nicht verfügbar |