| Anzahl | Preis |
|---|---|
| 1+ | 8.08 EUR |
| 10+ | 5.37 EUR |
| 50+ | 4.88 EUR |
| 100+ | 3.82 EUR |
| 200+ | 3.8 EUR |
| 500+ | 3.71 EUR |
| 1000+ | 3.56 EUR |
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Technische Details GAN190-650FBEZ Nexperia
Description: 650 V, 190 MOHM GALLIUM NITRIDE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 12.2mA, Supplier Device Package: DFN5060-5, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -1.4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V.
Weitere Produktangebote GAN190-650FBEZ nach Preis ab 3.66 EUR bis 8.54 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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GAN190-650FBEZ | Hersteller : Nexperia USA Inc. |
 Description: 650 V, 190 MOHM GALLIUM NITRIDEPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Supplier Device Package: DFN5060-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V |
auf Bestellung 1393 Stücke: Lieferzeit 10-14 Tag (e) |
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GAN190-650FBEZ | Hersteller : NEXPERIA |
Description: NEXPERIA - GAN190-650FBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 11.5 A, 0.138 ohm, 2.8 nC, DFN5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 11.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 2.8nC Bauform - Transistor: DFN5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Drain-Source-Durchgangswiderstand: 0.138ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1991 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN190-650FBEZ | Hersteller : NEXPERIA |
Description: NEXPERIA - GAN190-650FBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 11.5 A, 0.138 ohm, 2.8 nC, DFN5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 11.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 2.8nC Bauform - Transistor: DFN5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Drain-Source-Durchgangswiderstand: 0.138ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1991 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN190-650FBEZ | Hersteller : Nexperia USA Inc. |
Description: 650 V, 190 MOHM GALLIUM NITRIDE Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Supplier Device Package: DFN5060-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V |
Produkt ist nicht verfügbar |
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| GAN190-650FBEZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 20.5A Case: DFN5060-5 Gate-source voltage: -1.4...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.8nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 125W |
Produkt ist nicht verfügbar |