GAN3R2-100CBEAZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: 100 V, 3.2 MOHM GALLIUM NITRIDE
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Power Dissipation (Max): 394W
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: 8-WLCSP (3.5x2.13)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 3.11 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
1500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details GAN3R2-100CBEAZ Nexperia USA Inc.
Description: 100 V, 3.2 MOHM GALLIUM NITRIDE, Packaging: Tape & Reel (TR), Package / Case: 8-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A, Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V, Power Dissipation (Max): 394W, Vgs(th) (Max) @ Id: 2.5V @ 9mA, Supplier Device Package: 8-WLCSP (3.5x2.13), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V.
Weitere Produktangebote GAN3R2-100CBEAZ nach Preis ab 3.09 EUR bis 10.79 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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GAN3R2-100CBEAZ | NEXPERIA |
Description: NEXPERIA - GAN3R2-100CBEAZ - Galliumnitrid (GaN)-Transistor, 100 V, 60 A, 2400 µohm, 9.2 nC, WLCSP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Ladung, typ.: 9.2nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: WLCSP Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 2400µohm |
auf Bestellung 1049 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN3R2-100CBEAZ | Nexperia USA Inc. |
Description: 100 V, 3.2 MOHM GALLIUM NITRIDE Packaging: Cut Tape (CT) Package / Case: 8-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V Power Dissipation (Max): 394W Vgs(th) (Max) @ Id: 2.5V @ 9mA Supplier Device Package: 8-WLCSP (3.5x2.13) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V |
auf Bestellung 2377 Stücke: Lieferzeit 10-14 Tag (e) |
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GAN3R2-100CBEAZ | Nexperia |
GaN FETs GAN3R2-100CBE/SOT8072/WLCSP8 |
auf Bestellung 857 Stücke: Lieferzeit 10-14 Tag (e) |
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GAN3R2-100CBEAZ | NEXPERIA |
Description: NEXPERIA - GAN3R2-100CBEAZ - Galliumnitrid (GaN)-Transistor, 100 V, 60 A, 2400 µohm, 9.2 nC, WLCSP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 9.2nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: WLCSP Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 2400µohm |
auf Bestellung 1049 Stücke: Lieferzeit 14-21 Tag (e) |
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| GAN3R2-100CBEAZ |
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Hersteller: NEXPERIA
Description: NEXPERIA - GAN3R2-100CBEAZ - Galliumnitrid (GaN)-Transistor, 100 V, 60 A, 2400 µohm, 9.2 nC, WLCSP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Ladung, typ.: 9.2nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: WLCSP
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 2400µohm
Description: NEXPERIA - GAN3R2-100CBEAZ - Galliumnitrid (GaN)-Transistor, 100 V, 60 A, 2400 µohm, 9.2 nC, WLCSP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Ladung, typ.: 9.2nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: WLCSP
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 2400µohm
auf Bestellung 1049 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 4.34 EUR |
| 500+ | 3.8 EUR |
| 1000+ | 3.26 EUR |
| GAN3R2-100CBEAZ |
|
Hersteller: Nexperia USA Inc.
Description: 100 V, 3.2 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Power Dissipation (Max): 394W
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: 8-WLCSP (3.5x2.13)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Description: 100 V, 3.2 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Power Dissipation (Max): 394W
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: 8-WLCSP (3.5x2.13)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
auf Bestellung 2377 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.92 EUR |
| 10+ | 5.91 EUR |
| 50+ | 4.61 EUR |
| 100+ | 4.19 EUR |
| 500+ | 3.65 EUR |
| GAN3R2-100CBEAZ |
|
Hersteller: Nexperia
GaN FETs GAN3R2-100CBE/SOT8072/WLCSP8
GaN FETs GAN3R2-100CBE/SOT8072/WLCSP8
auf Bestellung 857 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.96 EUR |
| 10+ | 4.65 EUR |
| 100+ | 4.21 EUR |
| 500+ | 3.67 EUR |
| 1000+ | 3.14 EUR |
| 1500+ | 3.12 EUR |
| 3000+ | 3.09 EUR |
| GAN3R2-100CBEAZ |
|
Hersteller: NEXPERIA
Description: NEXPERIA - GAN3R2-100CBEAZ - Galliumnitrid (GaN)-Transistor, 100 V, 60 A, 2400 µohm, 9.2 nC, WLCSP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 9.2nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: WLCSP
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 2400µohm
Description: NEXPERIA - GAN3R2-100CBEAZ - Galliumnitrid (GaN)-Transistor, 100 V, 60 A, 2400 µohm, 9.2 nC, WLCSP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 9.2nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: WLCSP
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 2400µohm
auf Bestellung 1049 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 10.79 EUR |
| 45+ | 5.2 EUR |
| 100+ | 4.34 EUR |
| 500+ | 3.8 EUR |
| 1000+ | 3.26 EUR |