GAN3R2-100CBEAZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: 100 V, 3.2 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Power Dissipation (Max): 394W
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: 8-WLCSP (3.5x2.13)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
auf Bestellung 1032 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.27 EUR |
| 10+ | 4.82 EUR |
| 100+ | 3.43 EUR |
| 500+ | 3.23 EUR |
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Technische Details GAN3R2-100CBEAZ Nexperia USA Inc.
Description: 100 V, 3.2 MOHM GALLIUM NITRIDE, Packaging: Tape & Reel (TR), Package / Case: 8-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A, Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V, Power Dissipation (Max): 394W, Vgs(th) (Max) @ Id: 2.5V @ 9mA, Supplier Device Package: 8-WLCSP (3.5x2.13), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V.
Weitere Produktangebote GAN3R2-100CBEAZ nach Preis ab 3.36 EUR bis 7.3 EUR
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GAN3R2-100CBEAZ | Hersteller : Nexperia |
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GAN3R2-100CBEAZ | Hersteller : NEXPERIA |
Description: NEXPERIA - GAN3R2-100CBEAZ - Galliumnitrid (GaN)-Transistor, 100 V, 60 A, 0.0024 ohm, 9.2 nC, WLCSP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 9.2nC Bauform - Transistor: WLCSP Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.0024ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 1318 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN3R2-100CBEAZ | Hersteller : NEXPERIA |
Description: NEXPERIA - GAN3R2-100CBEAZ - Galliumnitrid (GaN)-Transistor, 100 V, 60 A, 0.0024 ohm, 9.2 nC, WLCSP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 9.2nC Bauform - Transistor: WLCSP Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.0024ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 1318 Stücke: Lieferzeit 14-21 Tag (e) |
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| GAN3R2-100CBEAZ | Hersteller : NEXPERIA |
Trans MOSFET N-CH GaN 100V 60A 8-Pin WLCSP T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN3R2-100CBEAZ | Hersteller : Nexperia |
Trans MOSFET N-CH GaN 100V 60A 8-Pin WLCSP T/R |
Produkt ist nicht verfügbar |
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GAN3R2-100CBEAZ | Hersteller : Nexperia USA Inc. |
Description: 100 V, 3.2 MOHM GALLIUM NITRIDE Packaging: Tape & Reel (TR) Package / Case: 8-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V Power Dissipation (Max): 394W Vgs(th) (Max) @ Id: 2.5V @ 9mA Supplier Device Package: 8-WLCSP (3.5x2.13) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V |
Produkt ist nicht verfügbar |
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| GAN3R2-100CBEAZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 230A Case: WLCSP8 Gate-source voltage: -4...6V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 12nC Kind of package: tape Kind of channel: enhancement Power dissipation: 394W |
Produkt ist nicht verfügbar |