GAN7R0-150LBEZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: 150 V, 7 MOHM GALLIUM NITRIDE (G
Packaging: Cut Tape (CT)
Package / Case: 3-VLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 5V
Power Dissipation (Max): 28W
Vgs(th) (Max) @ Id: 2.1V @ 5mA
Supplier Device Package: 3-FCLGA (3.2x2.2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 85 V
auf Bestellung 2833 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.80 EUR |
| 10+ | 4.27 EUR |
| 100+ | 3.45 EUR |
| 500+ | 3.08 EUR |
| 1000+ | 2.63 EUR |
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Technische Details GAN7R0-150LBEZ Nexperia USA Inc.
Description: 150 V, 7 MOHM GALLIUM NITRIDE (G, Packaging: Tape & Reel (TR), Package / Case: 3-VLGA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A, Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 5V, Power Dissipation (Max): 28W, Vgs(th) (Max) @ Id: 2.1V @ 5mA, Supplier Device Package: 3-FCLGA (3.2x2.2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 85 V.
Weitere Produktangebote GAN7R0-150LBEZ nach Preis ab 2.18 EUR bis 4.91 EUR
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GAN7R0-150LBEZ | Hersteller : Nexperia |
GaN FETs SOT8073 150V 28A FET |
auf Bestellung 2026 Stücke: Lieferzeit 10-14 Tag (e) |
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GAN7R0-150LBEZ | Hersteller : NEXPERIA |
Description: NEXPERIA - GAN7R0-150LBEZ - Galliumnitrid (GaN)-Transistor, 150 V, 28 A, 0.0056 ohm, 7.6 nC, FCLGA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 28A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 7.6nC Bauform - Transistor: FCLGA Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.0056ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2565 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN7R0-150LBEZ | Hersteller : NEXPERIA |
Description: NEXPERIA - GAN7R0-150LBEZ - Galliumnitrid (GaN)-Transistor, 150 V, 28 A, 0.0056 ohm, 7.6 nC, FCLGA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 28A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 7.6nC Bauform - Transistor: FCLGA Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.0056ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2565 Stücke: Lieferzeit 14-21 Tag (e) |
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GAN7R0-150LBEZ | Hersteller : NEXPERIA |
Trans MOSFET N-CH GaN 150V 28A T/R |
Produkt ist nicht verfügbar |
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| GAN7R0-150LBEZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 150V Drain current: 28A Pulsed drain current: 120A Case: FCLGA3 Gate-source voltage: -4...6V On-state resistance: 7mΩ Mounting: SMD Gate charge: 7.6nC Kind of package: tape Kind of channel: enhancement Power dissipation: 28W Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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GAN7R0-150LBEZ | Hersteller : Nexperia USA Inc. |
Description: 150 V, 7 MOHM GALLIUM NITRIDE (G Packaging: Tape & Reel (TR) Package / Case: 3-VLGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 5V Power Dissipation (Max): 28W Vgs(th) (Max) @ Id: 2.1V @ 5mA Supplier Device Package: 3-FCLGA (3.2x2.2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 85 V |
Produkt ist nicht verfügbar |
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| GAN7R0-150LBEZ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 150V Drain current: 28A Pulsed drain current: 120A Case: FCLGA3 Gate-source voltage: -4...6V On-state resistance: 7mΩ Mounting: SMD Gate charge: 7.6nC Kind of package: tape Kind of channel: enhancement Power dissipation: 28W |
Produkt ist nicht verfügbar |