| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.66 EUR |
| 10+ | 10.66 EUR |
| 100+ | 7.83 EUR |
| 500+ | 7.72 EUR |
| 1000+ | 7.08 EUR |
| 2500+ | 6.56 EUR |
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Technische Details GANB1R2-040QBAZ Nexperia
Description: GANB1R2-040QBA/SOT8092/VQFN16, Packaging: Tape & Reel (TR), Package / Case: 27-PowerVFQFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 5V, Power Dissipation (Max): 105W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: 27-VQFN (6x4), Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): 6V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 20 V.
Weitere Produktangebote GANB1R2-040QBAZ nach Preis ab 7.72 EUR bis 14.66 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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GANB1R2-040QBAZ | NEXPERIA |
 Description: NEXPERIA - GANB1R2-040QBAZ - Galliumnitrid (GaN)-Transistor, 100 A, 60 nC, VQFN, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: - rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 60nC Bauform - Transistor: VQFN Anzahl der Pins: 27Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: - SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 2445 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
GANB1R2-040QBAZ | NEXPERIA |
Description: NEXPERIA - GANB1R2-040QBAZ - Galliumnitrid (GaN)-Transistor, 100 A, 60 nC, VQFN, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR isCanonical: N hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 2445 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| GANB1R2-040QBAZ | Nexperia USA Inc. |
Description: GANB1R2-040QBA/SOT8092/VQFN16 Packaging: Cut Tape (CT) Package / Case: 27-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 5V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 27-VQFN (6x4) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): 6V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 20 V |
auf Bestellung 1380 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GANB1R2-040QBAZ |
|
Hersteller: NEXPERIA
Description: NEXPERIA - GANB1R2-040QBAZ - Galliumnitrid (GaN)-Transistor, 100 A, 60 nC, VQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: -
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 60nC
Bauform - Transistor: VQFN
Anzahl der Pins: 27Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: -
SVHC: No SVHC (25-Jun-2025)
Description: NEXPERIA - GANB1R2-040QBAZ - Galliumnitrid (GaN)-Transistor, 100 A, 60 nC, VQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: -
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 60nC
Bauform - Transistor: VQFN
Anzahl der Pins: 27Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: -
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 2445 Stücke:
Lieferzeit 14-21 Tag (e)
| GANB1R2-040QBAZ |
|
Hersteller: NEXPERIA
Description: NEXPERIA - GANB1R2-040QBAZ - Galliumnitrid (GaN)-Transistor, 100 A, 60 nC, VQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Description: NEXPERIA - GANB1R2-040QBAZ - Galliumnitrid (GaN)-Transistor, 100 A, 60 nC, VQFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 2445 Stücke:
Lieferzeit 14-21 Tag (e)
| GANB1R2-040QBAZ |
|
Hersteller: Nexperia USA Inc.
Description: GANB1R2-040QBA/SOT8092/VQFN16
Packaging: Cut Tape (CT)
Package / Case: 27-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 5V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 27-VQFN (6x4)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): 6V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 20 V
Description: GANB1R2-040QBA/SOT8092/VQFN16
Packaging: Cut Tape (CT)
Package / Case: 27-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 5V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 27-VQFN (6x4)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): 6V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 20 V
auf Bestellung 1380 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.66 EUR |
| 10+ | 9.97 EUR |
| 100+ | 7.72 EUR |