GANB4R8-040CBAZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: GANB4R8-040CBA/SOT8086/WLCSP22
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 20 V
Package / Case: 22-UFBGA, WLCSP
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 5V
Power Dissipation (Max): 13W (Ta)
Supplier Device Package: 22-WLCSP (2.1x2.1)
auf Bestellung 575 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.8 EUR |
| 10+ | 2.82 EUR |
| 100+ | 2.24 EUR |
| 500+ | 1.88 EUR |
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Technische Details GANB4R8-040CBAZ Nexperia USA Inc.
Description: GANB4R8-040CBA/SOT8086/WLCSP22, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): 40V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 20 V, Package / Case: 22-UFBGA, WLCSP, Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 5V, Power Dissipation (Max): 13W (Ta), Supplier Device Package: 22-WLCSP (2.1x2.1).
Weitere Produktangebote GANB4R8-040CBAZ nach Preis ab 1.46 EUR bis 4.38 EUR
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GANB4R8-040CBAZ | Hersteller : Nexperia |
GaN FETs 40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a 2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP) |
auf Bestellung 4674 Stücke: Lieferzeit 10-14 Tag (e) |
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GANB4R8-040CBAZ | Hersteller : NEXPERIA |
Description: NEXPERIA - GANB4R8-040CBAZ - Galliumnitrid (GaN)-Transistor, 20 A, 15.8 nC, WLCSP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: - rohsCompliant: YES Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 15.8nC Bauform - Transistor: WLCSP Anzahl der Pins: 22Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: - SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 4962 Stücke: Lieferzeit 14-21 Tag (e) |
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GANB4R8-040CBAZ | Hersteller : NEXPERIA |
Description: NEXPERIA - GANB4R8-040CBAZ - Galliumnitrid (GaN)-Transistor, 20 A, 15.8 nC, WLCSP, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code Gate-Ladung, typ.: 15.8nC rohsCompliant: YES Anzahl der Pins: 22Pin(s) euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Dauer-Drainstrom Id: 20A usEccn: EAR99 SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 4962 Stücke: Lieferzeit 14-21 Tag (e) |
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GANB4R8-040CBAZ | Hersteller : Nexperia USA Inc. |
Description: GANB4R8-040CBA/SOT8086/WLCSP22 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): 40V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 20 V Package / Case: 22-UFBGA, WLCSP Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 5V Power Dissipation (Max): 13W (Ta) Supplier Device Package: 22-WLCSP (2.1x2.1) |
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