
GANB8R0-040CBAZ Nexperia
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 2.97 EUR |
10+ | 2.06 EUR |
100+ | 1.65 EUR |
250+ | 1.52 EUR |
500+ | 1.38 EUR |
1000+ | 1.18 EUR |
2500+ | 1.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GANB8R0-040CBAZ Nexperia
Description: GANB8R0-040CBA/SOT8087/WLCSP16, Packaging: Tape & Reel (TR), Package / Case: 16-UFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 5V, Power Dissipation (Max): 15W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: 16-WLCSP (1.7x1.7), Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): 6V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 566 pF @ 20 V.
Weitere Produktangebote GANB8R0-040CBAZ nach Preis ab 1.53 EUR bis 3.52 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GANB8R0-040CBAZ | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 16-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 5V Power Dissipation (Max): 15W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 16-WLCSP (1.7x1.7) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): 6V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 566 pF @ 20 V |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||
GANB8R0-040CBAZ | Hersteller : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 5V Power Dissipation (Max): 15W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 16-WLCSP (1.7x1.7) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): 6V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 566 pF @ 20 V |
Produkt ist nicht verfügbar |