| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.53 EUR |
| 10+ | 7.02 EUR |
| 100+ | 5.05 EUR |
| 500+ | 4.57 EUR |
| 1000+ | 3.88 EUR |
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Technische Details GANE2R7-100CBAZ Nexperia
Description: GANE2R7-100CBA/SOT8089/WLCSP22, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): +5.5V, -4V, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs(th) (Max) @ Id: 2.5V @ 12.2mA, Power Dissipation (Max): 470W (Tc), Current - Continuous Drain (Id) @ 25°C: 64A (Tc), FET Type: P-Channel, Technology: GaNFET (Gallium Nitride), Mounting Type: Surface Mount, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V, Packaging: Tape & Reel (TR).
Weitere Produktangebote GANE2R7-100CBAZ nach Preis ab 4.57 EUR bis 9.89 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GANE2R7-100CBAZ | Nexperia USA Inc. |
 Description: GANE2R7-100CBA/SOT8089/WLCSP22Vgs (Max): +5.5V, -4V Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Power Dissipation (Max): 470W (Tc) Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: P-Channel Technology: GaNFET (Gallium Nitride) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Packaging: Cut Tape (CT) |
auf Bestellung 1498 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GANE2R7-100CBAZ |
|
Hersteller: Nexperia USA Inc.
Description: GANE2R7-100CBA/SOT8089/WLCSP22
Vgs (Max): +5.5V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Power Dissipation (Max): 470W (Tc)
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: P-Channel
Technology: GaNFET (Gallium Nitride)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Packaging: Cut Tape (CT)
Description: GANE2R7-100CBA/SOT8089/WLCSP22
Vgs (Max): +5.5V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Power Dissipation (Max): 470W (Tc)
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: P-Channel
Technology: GaNFET (Gallium Nitride)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Packaging: Cut Tape (CT)
auf Bestellung 1498 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.89 EUR |
| 10+ | 6.59 EUR |
| 100+ | 4.72 EUR |
| 500+ | 4.57 EUR |