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GANE2R7-100CBAZ

GANE2R7-100CBAZ Nexperia

GANE2R7-100CBA.pdf Hersteller: Nexperia
GaN FETs GANE2R7-100CBA/SOT8089/WLCSP22
auf Bestellung 1188 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.54 EUR
10+7.04 EUR
50+5.53 EUR
100+5.03 EUR
1500+3.75 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details GANE2R7-100CBAZ Nexperia

Description: GANE2R7-100CBA/SOT8089/WLCSP22, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Technology: GaNFET (Gallium Nitride), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Power Dissipation (Max): 470W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 12.2mA, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +5.5V, -4V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V.

Weitere Produktangebote GANE2R7-100CBAZ nach Preis ab 3.84 EUR bis 8.31 EUR

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GANE2R7-100CBAZ Hersteller : Nexperia USA Inc. GANE2R7-100CBA.pdf Description: GANE2R7-100CBA/SOT8089/WLCSP22
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Technology: GaNFET (Gallium Nitride)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 1498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.31 EUR
10+5.54 EUR
100+3.97 EUR
500+3.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
GANE2R7-100CBAZ Hersteller : Nexperia USA Inc. GANE2R7-100CBA.pdf Description: GANE2R7-100CBA/SOT8089/WLCSP22
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Technology: GaNFET (Gallium Nitride)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH