| Anzahl | Preis |
|---|---|
| 1+ | 8.85 EUR |
| 10+ | 5.9 EUR |
| 100+ | 4.24 EUR |
| 500+ | 3.84 EUR |
| 1000+ | 3.26 EUR |
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Technische Details GANE2R7-100CBAZ Nexperia
Description: GANE2R7-100CBA/SOT8089/WLCSP22, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): +5.5V, -4V, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs(th) (Max) @ Id: 2.5V @ 12.2mA, Power Dissipation (Max): 470W (Tc), Current - Continuous Drain (Id) @ 25°C: 64A (Tc), FET Type: P-Channel, Technology: GaNFET (Gallium Nitride), Mounting Type: Surface Mount, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V, Packaging: Tape & Reel (TR).
Weitere Produktangebote GANE2R7-100CBAZ nach Preis ab 3.84 EUR bis 8.31 EUR
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| GANE2R7-100CBAZ | Hersteller : Nexperia USA Inc. |
 Description: GANE2R7-100CBA/SOT8089/WLCSP22Vgs (Max): +5.5V, -4V Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Power Dissipation (Max): 470W (Tc) Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: P-Channel Technology: GaNFET (Gallium Nitride) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Packaging: Cut Tape (CT) |
auf Bestellung 1498 Stücke: Lieferzeit 10-14 Tag (e) |
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| GANE2R7-100CBAZ | Hersteller : Nexperia USA Inc. |
Description: GANE2R7-100CBA/SOT8089/WLCSP22 Drain to Source Voltage (Vdss): 100 V Vgs (Max): +5.5V, -4V Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Power Dissipation (Max): 470W (Tc) Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: P-Channel Technology: GaNFET (Gallium Nitride) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Packaging: Tape & Reel (TR) |
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