| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.69 EUR |
| 10+ | 3.09 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.78 EUR |
| 1000+ | 1.58 EUR |
| 2500+ | 1.37 EUR |
| 5000+ | 1.29 EUR |
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Technische Details GANE350-700BBAZ Nexperia
Description: GANE350-700BBA/SOT428/DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 2.2A, 6V, Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 6.6mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -1.4V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 400 V.
Weitere Produktangebote GANE350-700BBAZ nach Preis ab 2.98 EUR bis 4.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
| GANE350-700BBAZ | Nexperia USA Inc. |
 Description: GANE350-700BBA/SOT428/DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 2.2A, 6V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 6.6mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 400 V |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GANE350-700BBAZ |
|
Hersteller: Nexperia USA Inc.
Description: GANE350-700BBA/SOT428/DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2.2A, 6V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 6.6mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 400 V
Description: GANE350-700BBA/SOT428/DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2.2A, 6V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 6.6mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 400 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.63 EUR |
| 10+ | 2.98 EUR |