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GANE350-700BBAZ

GANE350-700BBAZ Nexperia

GANE350-700BBA.pdf
Hersteller: Nexperia
GaN FETs GANE350-700BBA/SOT428/DPAK
auf Bestellung 2355 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.68 EUR
10+2.38 EUR
50+2.31 EUR
100+1.95 EUR
500+1.56 EUR
1000+1.53 EUR
2500+1.08 EUR
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Technische Details GANE350-700BBAZ Nexperia

Description: GANE350-700BBA/SOT428/DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 2.2A, 6V, Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 6.6mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -1.4V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 400 V.

Weitere Produktangebote GANE350-700BBAZ nach Preis ab 2.5 EUR bis 3.89 EUR

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Preis
GANE350-700BBAZ Hersteller : Nexperia USA Inc. GANE350-700BBA.pdf Description: GANE350-700BBA/SOT428/DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2.2A, 6V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 6.6mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 400 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.89 EUR
10+2.5 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
GANE350-700BBAZ Hersteller : Nexperia USA Inc. GANE350-700BBA.pdf Description: GANE350-700BBA/SOT428/DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2.2A, 6V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 6.6mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 400 V
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Im Einkaufswagen  Stück im Wert von  UAH