auf Bestellung 2337 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 17.02 EUR |
| 10+ | 11.63 EUR |
| 50+ | 9.35 EUR |
| 100+ | 8.61 EUR |
| 1000+ | 7.44 EUR |
| 2500+ | 7.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GANE3R9-150QBAZ Nexperia
Description: GANE3R9-150QBA/SOT8091/VQFN7, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Power Dissipation (Max): 65W (Ta), Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V, Package / Case: 25-PowerVFQFN, Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V, Vgs(th) (Max) @ Id: 2.1V @ 12mA, Supplier Device Package: 25-VQFN (4x6).
Weitere Produktangebote GANE3R9-150QBAZ nach Preis ab 8.64 EUR bis 17.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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GANE3R9-150QBAZ | Hersteller : Nexperia USA Inc. |
 Description: GANE3R9-150QBA/SOT8091/VQFN7Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Power Dissipation (Max): 65W (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V Package / Case: 25-PowerVFQFN Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.1V @ 12mA Supplier Device Package: 25-VQFN (4x6) |
auf Bestellung 2064 Stücke: Lieferzeit 10-14 Tag (e) |
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GANE3R9-150QBAZ | Hersteller : NEXPERIA |
Description: NEXPERIA - GANE3R9-150QBAZ - Galliumnitrid (GaN)-Transistor, 150 V, 100 A, 0.0039 ohm, 20 nC, VQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 20nC Bauform - Transistor: VQFN Anzahl der Pins: 25Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.0039ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 2322 Stücke: Lieferzeit 14-21 Tag (e) |
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GANE3R9-150QBAZ | Hersteller : NEXPERIA |
Description: NEXPERIA - GANE3R9-150QBAZ - Galliumnitrid (GaN)-Transistor, 150 V, 100 A, 0.0039 ohm, 20 nC, VQFN, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 20nC Anzahl der Pins: 25Pin(s) productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.0039ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 2322 Stücke: Lieferzeit 14-21 Tag (e) |
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| GANE3R9-150QBAZ | Hersteller : NEXPERIA |
GANE3R9-150QBA/SOT8091/VQFN7 |
Produkt ist nicht verfügbar |
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| GANE3R9-150QBAZ | Hersteller : Nexperia |
Gallium Nitride (GaN) FET |
Produkt ist nicht verfügbar |
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| GANE3R9-150QBAZ | Hersteller : Nexperia |
Gallium Nitride (GaN) FET |
Produkt ist nicht verfügbar |
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GANE3R9-150QBAZ | Hersteller : Nexperia USA Inc. |
Description: GANE3R9-150QBA/SOT8091/VQFN7 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Power Dissipation (Max): 65W (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V Package / Case: 25-PowerVFQFN Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.1V @ 12mA Supplier Device Package: 25-VQFN (4x6) |
Produkt ist nicht verfügbar |