| Anzahl | Preis |
|---|---|
| 1+ | 14.56 EUR |
| 10+ | 9.98 EUR |
| 100+ | 7.41 EUR |
| 1000+ | 6.79 EUR |
| 2500+ | 6.3 EUR |
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Technische Details GANE3R9-150QBAZ Nexperia
Description: GANE3R9-150QBA/SOT8091/VQFN7, Packaging: Tape & Reel (TR), Package / Case: 25-PowerVFQFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V, Power Dissipation (Max): 65W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 12mA, Supplier Device Package: 25-VQFN (4x6), Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V.
Weitere Produktangebote GANE3R9-150QBAZ nach Preis ab 7.95 EUR bis 15.72 EUR
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GANE3R9-150QBAZ | Hersteller : Nexperia USA Inc. |
 Description: GANE3R9-150QBA/SOT8091/VQFN7Packaging: Cut Tape (CT) Package / Case: 25-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V Power Dissipation (Max): 65W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 12mA Supplier Device Package: 25-VQFN (4x6) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V |
auf Bestellung 2063 Stücke: Lieferzeit 10-14 Tag (e) |
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GANE3R9-150QBAZ | Hersteller : NEXPERIA |
Description: NEXPERIA - GANE3R9-150QBAZ - Galliumnitrid (GaN)-Transistor, 150 V, 100 A, 3900 µohm, 20 nC, VQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 20nC Bauform - Transistor: VQFN Anzahl der Pins: 25Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 3900µohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 2275 Stücke: Lieferzeit 14-21 Tag (e) |
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GANE3R9-150QBAZ | Hersteller : NEXPERIA |
Description: NEXPERIA - GANE3R9-150QBAZ - Galliumnitrid (GaN)-Transistor, 150 V, 100 A, 3900 µohm, 20 nC, VQFN, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES isCanonical: N usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 20nC Anzahl der Pins: 25Pin(s) productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 3900µohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 2275 Stücke: Lieferzeit 14-21 Tag (e) |
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GANE3R9-150QBAZ | Hersteller : Nexperia USA Inc. |
Description: GANE3R9-150QBA/SOT8091/VQFN7 Packaging: Tape & Reel (TR) Package / Case: 25-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V Power Dissipation (Max): 65W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 12mA Supplier Device Package: 25-VQFN (4x6) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V |
Produkt ist nicht verfügbar |