| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.33 EUR |
| 10+ | 11.88 EUR |
| 100+ | 8.82 EUR |
| 1000+ | 8.08 EUR |
| 2500+ | 7.5 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GANE3R9-150QBAZ Nexperia
Description: GANE3R9-150QBA/SOT8091/VQFN7, Packaging: Tape & Reel (TR), Package / Case: 25-PowerVFQFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V, Power Dissipation (Max): 65W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 12mA, Supplier Device Package: 25-VQFN (4x6), Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V.
Weitere Produktangebote GANE3R9-150QBAZ nach Preis ab 8.96 EUR bis 27.47 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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GANE3R9-150QBAZ | Nexperia USA Inc. |
 Description: GANE3R9-150QBA/SOT8091/VQFN7Packaging: Cut Tape (CT) Package / Case: 25-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V Power Dissipation (Max): 65W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 12mA Supplier Device Package: 25-VQFN (4x6) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V |
auf Bestellung 1923 Stücke: Lieferzeit 10-14 Tag (e) |
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GANE3R9-150QBAZ | NEXPERIA |
Description: NEXPERIA - GANE3R9-150QBAZ - Galliumnitrid (GaN)-Transistor, 150 V, 100 A, 3900 µohm, 20 nC, VQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 20nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: VQFN Anzahl der Pins: 25Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 3900µohm |
auf Bestellung 2154 Stücke: Lieferzeit 14-21 Tag (e) |
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GANE3R9-150QBAZ | NEXPERIA |
Description: NEXPERIA - GANE3R9-150QBAZ - Galliumnitrid (GaN)-Transistor, 150 V, 100 A, 3900 µohm, 20 nC, VQFN, Oberflächenmontage tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES isCanonical: N Gate-Ladung, typ.: 20nC SVHC: No SVHC (25-Jun-2025) Anzahl der Pins: 25Pin(s) productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 3900µohm |
auf Bestellung 2154 Stücke: Lieferzeit 14-21 Tag (e) |
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| GANE3R9-150QBAZ |
|
Hersteller: Nexperia USA Inc.
Description: GANE3R9-150QBA/SOT8091/VQFN7
Packaging: Cut Tape (CT)
Package / Case: 25-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V
Power Dissipation (Max): 65W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 12mA
Supplier Device Package: 25-VQFN (4x6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
Description: GANE3R9-150QBA/SOT8091/VQFN7
Packaging: Cut Tape (CT)
Package / Case: 25-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V
Power Dissipation (Max): 65W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 12mA
Supplier Device Package: 25-VQFN (4x6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
auf Bestellung 1923 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.61 EUR |
| 10+ | 12.05 EUR |
| 50+ | 9.67 EUR |
| 100+ | 8.96 EUR |
| GANE3R9-150QBAZ |
|
Hersteller: NEXPERIA
Description: NEXPERIA - GANE3R9-150QBAZ - Galliumnitrid (GaN)-Transistor, 150 V, 100 A, 3900 µohm, 20 nC, VQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 20nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: VQFN
Anzahl der Pins: 25Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 3900µohm
Description: NEXPERIA - GANE3R9-150QBAZ - Galliumnitrid (GaN)-Transistor, 150 V, 100 A, 3900 µohm, 20 nC, VQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 20nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: VQFN
Anzahl der Pins: 25Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 3900µohm
auf Bestellung 2154 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 27.47 EUR |
| 11+ | 21.62 EUR |
| 14+ | 16.39 EUR |
| 50+ | 14.29 EUR |
| 100+ | 12.16 EUR |
| 250+ | 11.94 EUR |
| GANE3R9-150QBAZ |
|
Hersteller: NEXPERIA
Description: NEXPERIA - GANE3R9-150QBAZ - Galliumnitrid (GaN)-Transistor, 150 V, 100 A, 3900 µohm, 20 nC, VQFN, Oberflächenmontage
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Gate-Ladung, typ.: 20nC
SVHC: No SVHC (25-Jun-2025)
Anzahl der Pins: 25Pin(s)
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 3900µohm
Description: NEXPERIA - GANE3R9-150QBAZ - Galliumnitrid (GaN)-Transistor, 150 V, 100 A, 3900 µohm, 20 nC, VQFN, Oberflächenmontage
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Gate-Ladung, typ.: 20nC
SVHC: No SVHC (25-Jun-2025)
Anzahl der Pins: 25Pin(s)
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 3900µohm
auf Bestellung 2154 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 27.47 EUR |
| 11+ | 21.62 EUR |
| 14+ | 16.39 EUR |
| 50+ | 14.29 EUR |
| 100+ | 12.16 EUR |
| 250+ | 11.94 EUR |