GBL01E-E3/P Vishay General Semiconductor
auf Bestellung 1956 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.2 EUR |
| 10+ | 1.76 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 1.03 EUR |
| 2000+ | 0.89 EUR |
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Technische Details GBL01E-E3/P Vishay General Semiconductor
Description: BRIDGE RECT 1PHASE 100V 3A GBL, Packaging: Bulk, Package / Case: 4-SIP, GBL, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBL, Voltage - Peak Reverse (Max): 100 V, Current - Average Rectified (Io): 2.6 A, Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.
Weitere Produktangebote GBL01E-E3/P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| GBL01E-E3/P | Hersteller : Vishay |
 Diode Rectifier Bridge Single 100V 2.6A 4-Pin Case GBL Tube |
Produkt ist nicht verfügbar |
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| GBL01E-E3/P | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 100V 3A GBL Packaging: Bulk Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2.6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |