GBL08HD2G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 4A GBL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
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Technische Details GBL08HD2G Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 4A GBL, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 5 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A, Current - Average Rectified (Io): 4 A, Voltage - Peak Reverse (Max): 800 V, Part Status: Active, Supplier Device Package: GBL, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, GBL, Packaging: Tube.