GBP210S YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGYCategory: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 50A
Case: GBP
Electrical mounting: THT
Kind of package: bulk
Version: flat
Leads: flat pin
auf Bestellung 2030 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 320+ | 0.23 EUR |
| 525+ | 0.14 EUR |
| 565+ | 0.13 EUR |
| 585+ | 0.12 EUR |
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Technische Details GBP210S YANGJIE TECHNOLOGY
Description: RECT BRIDGE 1000V 2A GBP, Packaging: Tube, Package / Case: 4-ESIP, GBP, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBP, Part Status: Active, Voltage - Peak Reverse (Max): 1 kV, Current - Average Rectified (Io): 2 A, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
Weitere Produktangebote GBP210S nach Preis ab 0.15 EUR bis 0.8 EUR
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GBP210S | Hersteller : Yangjie Technology |
Description: GBP 1000V 2.0A Diodes Bridge R Packaging: Tube Part Status: Active |
auf Bestellung 210000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GBP210S | Hersteller : Yangjie Electronic Technology |
Bridge Rectifier Diode |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GBP210S | Hersteller : YY |
2A; 1000V; package: box GBP210S; bridge rectifying flat MP021000gbp210s Anzahl je Verpackung: 35 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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GBP210S | Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: RECT BRIDGE 1000V 2A GBP Packaging: Tube Package / Case: 4-ESIP, GBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBP Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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