Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > GBPC3506W/1

GBPC3506W/1 Vishay General Semiconductor - Diodes Division

Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 35A GBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: GBPC-W
Technology: Standard
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Bulk

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Technische Details GBPC3506W/1 Vishay General Semiconductor - Diodes Division

Description: BRIDGE RECT 1P 600V 35A GBPC-W, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A, Current - Average Rectified (Io): 35 A, Voltage - Peak Reverse (Max): 600 V, Supplier Device Package: GBPC-W, Technology: Standard, Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-Square, GBPC-W, Packaging: Bulk.