GBPC3508M Taiwan Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 7.64 EUR |
| 10+ | 5.09 EUR |
| 100+ | 3.31 EUR |
| 500+ | 2.94 EUR |
| 1000+ | 2.92 EUR |
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Technische Details GBPC3508M Taiwan Semiconductor
Description: BRIDGE RECT 1P 800V 35A GBPC-M, Packaging: Tray, Package / Case: 4-Square, GBPC-M, Mounting Type: Chassis Mount, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBPC-M, Part Status: Active, Voltage - Peak Reverse (Max): 800 V, Current - Average Rectified (Io): 35 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V.
Weitere Produktangebote GBPC3508M nach Preis ab 3.91 EUR bis 8.25 EUR
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GBPC3508M | Hersteller : Taiwan Semiconductor Corporation |
 Description: BRIDGE RECT 1P 800V 35A GBPC-MPackaging: Tray Package / Case: 4-Square, GBPC-M Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-M Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
auf Bestellung 288 Stücke: Lieferzeit 10-14 Tag (e) |
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