GBU803 Taiwan Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.44 EUR |
| 10+ | 2.18 EUR |
| 100+ | 1.45 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.02 EUR |
| 2000+ | 0.95 EUR |
| 5000+ | 0.87 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GBU803 Taiwan Semiconductor
Description: BRIDGE RECT 1PHASE 200V 8A GBU, Voltage - Peak Reverse (Max): 200 V, Part Status: Active, Supplier Device Package: GBU, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-ESIP, GBU, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Current - Average Rectified (Io): 8 A, Packaging: Tube.
Weitere Produktangebote GBU803
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
GBU803 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 200V 8A GBUVoltage - Peak Reverse (Max): 200 V Part Status: Active Supplier Device Package: GBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-ESIP, GBU Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Average Rectified (Io): 8 A Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GBU803 |
![]() |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 8A GBU
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-ESIP, GBU
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Average Rectified (Io): 8 A
Packaging: Tube
Description: BRIDGE RECT 1PHASE 200V 8A GBU
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-ESIP, GBU
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Average Rectified (Io): 8 A
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


