GBU803 Taiwan Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 2.89 EUR |
| 10+ | 1.83 EUR |
| 100+ | 1.22 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.86 EUR |
| 2000+ | 0.8 EUR |
| 5000+ | 0.73 EUR |
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Technische Details GBU803 Taiwan Semiconductor
Description: BRIDGE RECT 1PHASE 200V 8A GBU, Voltage - Peak Reverse (Max): 200 V, Part Status: Active, Supplier Device Package: GBU, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-ESIP, GBU, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Current - Average Rectified (Io): 8 A, Packaging: Tube.
Weitere Produktangebote GBU803
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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GBU803 | Hersteller : Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 200V 8A GBUVoltage - Peak Reverse (Max): 200 V Part Status: Active Supplier Device Package: GBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-ESIP, GBU Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Average Rectified (Io): 8 A Packaging: Tube |
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