GBU803H Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 8A 200V GBU
Qualification: AEC-Q101
Grade: Automotive
Package / Case: 4-ESIP, GBU
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Average Rectified (Io): 8 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
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Technische Details GBU803H Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 8A 200V GBU, Qualification: AEC-Q101, Grade: Automotive, Package / Case: 4-ESIP, GBU, Packaging: Tube, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Current - Average Rectified (Io): 8 A, Voltage - Peak Reverse (Max): 200 V, Part Status: Active, Supplier Device Package: GBU, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole.
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GBU803H | Hersteller : Taiwan Semiconductor | Bridge Rectifiers 8A, 200V, Standard Bridge Rectifier |
Produkt ist nicht verfügbar |