GBU8DL-6088M3/51 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 3.9A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Average Rectified (Io): 3.9 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
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Technische Details GBU8DL-6088M3/51 Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 3.9A GBU, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A, Current - Average Rectified (Io): 3.9 A, Voltage - Peak Reverse (Max): 200 V, Supplier Device Package: GBU, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, GBU, Packaging: Tube.