GBU8J-001E3/51 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Average Rectified (Io): 3.9 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
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Technische Details GBU8J-001E3/51 Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.9A GBU, Mounting Type: Through Hole, Package / Case: 4-SIP, GBU, Packaging: Tube, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A, Current - Average Rectified (Io): 3.9 A, Voltage - Peak Reverse (Max): 600 V, Part Status: Obsolete, Supplier Device Package: GBU, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase.