Produkte > GOFORD SEMICONDUCTOR > GC085N65QF

GC085N65QF GOFORD SEMICONDUCTOR

Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 40A; 299W; TO247
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO247
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±30V
Gate charge: 76nC
Drain current: 40A
Power dissipation: 299W

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Technische Details GC085N65QF GOFORD SEMICONDUCTOR

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 40A; 299W; TO247, Type of transistor: N-MOSFET, Technology: SJ-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Case: TO247, Mounting: THT, Kind of channel: enhancement, Gate-source voltage: ±30V, Gate charge: 76nC, Drain current: 40A, Power dissipation: 299W.