GC11N65D5 Goford Semiconductor
Hersteller: Goford SemiconductorDescription: N650V, 11A,RD<360M@10V,VTH2.5V~4
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
auf Bestellung 4742 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.01 EUR |
| 10+ | 2.57 EUR |
| 100+ | 1.76 EUR |
| 500+ | 1.41 EUR |
| 1000+ | 1.30 EUR |
| 2000+ | 1.20 EUR |
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Technische Details GC11N65D5 Goford Semiconductor
N-CH 650V 11A 360mOhm/MAX at 10V DFN5x6-8L.
Weitere Produktangebote GC11N65D5 nach Preis ab 1.08 EUR bis 1.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| GC11N65D5 | Hersteller : GOFORD Semiconductor |
N-CH 650V 11A 360mOhm/MAX at 10V DFN5x6-8L |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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GC11N65D5 | Hersteller : Goford Semiconductor |
Description: N650V, 11A,RD<360M@10V,VTH2.5V~4 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V |
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