GC11N65D5 Goford Semiconductor
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 11A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
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Technische Details GC11N65D5 Goford Semiconductor
Description: MOSFET N-CH 650V 11A DFN5*6-8L, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFN (4.9x5.75), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V.
Weitere Produktangebote GC11N65D5 nach Preis ab 1.26 EUR bis 1.26 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| GC11N65D5 | GOFORD Semiconductor |
N-CH 650V 11A 360mOhm/MAX at 10V DFN5x6-8L |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GC11N65D5 |
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Hersteller: GOFORD Semiconductor
N-CH 650V 11A 360mOhm/MAX at 10V DFN5x6-8L
N-CH 650V 11A 360mOhm/MAX at 10V DFN5x6-8L
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 1.26 EUR |