GC11N65F Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET N-CH 650V 11A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 1.26 EUR |
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Technische Details GC11N65F Goford Semiconductor
Description: MOSFET N-CH 650V 11A TO-220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V, Power Dissipation (Max): 38.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V.
Weitere Produktangebote GC11N65F nach Preis ab 1.02 EUR bis 4.65 EUR
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GC11N65F | Hersteller : Goford Semiconductor |
Description: N650V,RD(MAX)<360M@10V,VTH2.5V~4 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 38.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V |
auf Bestellung 127 Stücke: Lieferzeit 10-14 Tag (e) |
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| GC11N65F | Hersteller : GOFORD Semiconductor |
N-CH,650V,11A,RD(max) Less Than 360mOhm at 10V,VTH 2.5V to 4V ,TO-220F |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GC11N65F | Hersteller : GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 11A; 31.3W; TO220F Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 31.3W Case: TO220F Gate-source voltage: ±30V Mounting: THT Gate charge: 21nC Kind of channel: enhancement |
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