GC11N65F Goford Semiconductor
Hersteller: Goford Semiconductor
Description: N650V,RD(MAX)<360M@10V,VTH2.5V~4
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.7 EUR |
| 50+ | 2.82 EUR |
| 100+ | 2.55 EUR |
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Technische Details GC11N65F Goford Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 11A; 31.3W; TO220F, Type of transistor: N-MOSFET, Technology: SJ-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 11A, Power dissipation: 31.3W, Case: TO220F, Gate-source voltage: ±30V, Mounting: THT, Kind of channel: enhancement, Gate charge: 21nC.
Weitere Produktangebote GC11N65F
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| GC11N65F | GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 11A; 31.3W; TO220F Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 31.3W Case: TO220F Gate-source voltage: ±30V Mounting: THT Kind of channel: enhancement Gate charge: 21nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GC11N65F |
|
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 11A; 31.3W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 31.3W
Case: TO220F
Gate-source voltage: ±30V
Mounting: THT
Kind of channel: enhancement
Gate charge: 21nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 11A; 31.3W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 31.3W
Case: TO220F
Gate-source voltage: ±30V
Mounting: THT
Kind of channel: enhancement
Gate charge: 21nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH