GC11N65K Goford Semiconductor
Hersteller: Goford SemiconductorDescription: N650V,RD(MAX)<360M@10V,VTH2.5V~4
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
auf Bestellung 2212 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.94 EUR |
| 10+ | 2.54 EUR |
| 100+ | 1.73 EUR |
| 500+ | 1.39 EUR |
| 1000+ | 1.28 EUR |
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Technische Details GC11N65K Goford Semiconductor
Description: N650V,RD(MAX).
Weitere Produktangebote GC11N65K nach Preis ab 0.75 EUR bis 0.97 EUR
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| GC11N65K | Hersteller : GOFORD Semiconductor |
Small Package MOSFET |
auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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GC11N65K | Hersteller : Goford Semiconductor |
Description: N650V,RD(MAX)<360M@10V,VTH2.5V~4 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V |
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