GC11N65K Goford Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.19 EUR |
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Technische Details GC11N65K Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 11A; 179W; TO252, Type of transistor: N-MOSFET, Technology: SJ-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 11A, Power dissipation: 179W, Case: TO252, Gate-source voltage: ±30V, Mounting: SMD, Kind of channel: enhancement, Gate charge: 21nC.
Weitere Produktangebote GC11N65K nach Preis ab 0.94 EUR bis 5.05 EUR
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GC11N65K | Goford Semiconductor |
 Description: N650V,RD(MAX)<360M@10V,VTH2.5V~4Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V |
auf Bestellung 2180 Stücke: Lieferzeit 10-14 Tag (e) |
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| GC11N65K | GOFORD Semiconductor |
Small Package MOSFET |
auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GC11N65K |
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Hersteller: Goford Semiconductor
Description: N650V,RD(MAX)<360M@10V,VTH2.5V~4
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
Description: N650V,RD(MAX)<360M@10V,VTH2.5V~4
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
auf Bestellung 2180 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.05 EUR |
| 10+ | 3.24 EUR |
| 50+ | 2.46 EUR |
| 100+ | 2.23 EUR |
| 500+ | 1.78 EUR |
| GC11N65K |
|
Hersteller: GOFORD Semiconductor
Small Package MOSFET
Small Package MOSFET
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.17 EUR |
| 15000+ | 1.06 EUR |
| 30000+ | 0.94 EUR |