GC120N65QF Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET N-CH 650V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 38A, 10V
Power Dissipation (Max): 96.1W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 275 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.28 EUR |
| 30+ | 7.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GC120N65QF Goford Semiconductor
Description: MOSFET N-CH 650V 30A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 38A, 10V, Power Dissipation (Max): 96.1W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 275 V.
Weitere Produktangebote GC120N65QF nach Preis ab 5.12 EUR bis 5.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
| GC120N65QF | Hersteller : GOFORD Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
|