GC180N65F Goford Semiconductor
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 1.2 EUR |
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Technische Details GC180N65F Goford Semiconductor
Description: MOSFET,N-CH,650V,20A,37W,TO-220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V, Power Dissipation (Max): 37W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V.
Weitere Produktangebote GC180N65F nach Preis ab 3.24 EUR bis 4.98 EUR
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GC180N65F | Hersteller : Goford Semiconductor |
 Description: MOSFET,N-CH,650V,20A,37W,TO-220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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