GC20N65F Goford Semiconductor
Hersteller: Goford SemiconductorDescription: N650V,RD(MAX)<170M@10V,VTH2.5V~4
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1603 pF @ 100 V
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.97 EUR |
| 10+ | 4.61 EUR |
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Technische Details GC20N65F Goford Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 40W; TO220F, Type of transistor: N-MOSFET, Technology: SJ-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 20A, Power dissipation: 40W, Case: TO220F, Gate-source voltage: ±30V, Mounting: THT, Kind of channel: enhancement, Gate charge: 39nC.
Weitere Produktangebote GC20N65F
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| GC20N65F | Hersteller : GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 40W; TO220F Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 40W Case: TO220F Gate-source voltage: ±30V Mounting: THT Kind of channel: enhancement Gate charge: 39nC |
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