Produkte > GOFORD SEMICONDUCTOR > GC20N65QD
GC20N65QD

GC20N65QD Goford Semiconductor

GC20N65QD.pdf
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 20A TO-247
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 400 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.12 EUR
10+6.74 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details GC20N65QD Goford Semiconductor

Description: MOSFET N-CH 650V 20A TO-247, Packaging: Tube, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 400 V.

Weitere Produktangebote GC20N65QD

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
GC20N65QD GOFORD SEMICONDUCTOR GC20N65QD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 151W; TO247
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 151W
Case: TO247
Gate-source voltage: ±30V
Mounting: THT
Kind of channel: enhancement
Gate charge: 39nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65QD GC20N65QD.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 151W; TO247
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 151W
Case: TO247
Gate-source voltage: ±30V
Mounting: THT
Kind of channel: enhancement
Gate charge: 39nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH