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GC380N60FE

GC380N60FE Goford Semiconductor

GC380N60FE.pdf
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,600V,11A,31W,TO-220F
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.68 EUR
Mindestbestellmenge: 1000
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Technische Details GC380N60FE Goford Semiconductor

Description: MOSFET,N-CH,600V,11A,31W,TO-220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 4.5A, 10V, Power Dissipation (Max): 31W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 300 V.

Weitere Produktangebote GC380N60FE nach Preis ab 2.11 EUR bis 3.29 EUR

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GC380N60FE GC380N60FE Hersteller : Goford Semiconductor GC380N60FE.pdf Description: MOSFET,N-CH,600V,11A,31W,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 300 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.29 EUR
10+2.11 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
GC380N60FE Hersteller : GOFORD SEMICONDUCTOR GC380N60FE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 11A; 31W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 31W
Case: TO220F
Gate-source voltage: ±30V
Mounting: THT
Gate charge: 17nC
Kind of channel: enhancement
Version: ESD
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