GCMS008C120S1-E1 SemiQ
Hersteller: SemiQDescription: GEN3 1200V 8M SIC MOSFET & SBD
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 189A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 18V
Power Dissipation (Max): 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 506 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 14085 pF @ 1000 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 63.5 EUR |
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Technische Details GCMS008C120S1-E1 SemiQ
Description: GEN3 1200V 8M SIC MOSFET & SBD, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 189A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 18V, Power Dissipation (Max): 536W (Tc), Vgs(th) (Max) @ Id: 4V @ 40mA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 506 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 14085 pF @ 1000 V.
Weitere Produktangebote GCMS008C120S1-E1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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GCMS008C120S1-E1 | Hersteller : SemiQ |
MOSFET Modules Gen3 1200V 8mohm SiC MOSFET & SBD Module, SOT-227 |
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