GCMS080B120S1-E1 SemiQ
Hersteller: SemiQDescription: SIC 1200V 80M MOSFET & 10A SBD S
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1374 pF @ 1000 V
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 34.62 EUR |
| 10+ | 24.96 EUR |
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Technische Details GCMS080B120S1-E1 SemiQ
Description: SIC 1200V 80M MOSFET & 10A SBD S, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Power Dissipation (Max): 142W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: SOT-227, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1374 pF @ 1000 V.
Weitere Produktangebote GCMS080B120S1-E1 nach Preis ab 23.06 EUR bis 35.13 EUR
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GCMS080B120S1-E1 | Hersteller : SemiQ |
Discrete Semiconductor Modules SiC 1200V 80mO MOSFET & 10A SBD SOT-227 |
auf Bestellung 1381 Stücke: Lieferzeit 10-14 Tag (e) |
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