GCMS080B120S1-E1 SemiQ
auf Bestellung 777 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 33.56 EUR |
| 10+ | 24.5 EUR |
| 100+ | 22.07 EUR |
| 500+ | 22.04 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GCMS080B120S1-E1 SemiQ
Description: SIC 1200V 80M MOSFET & 10A SBD S, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Power Dissipation (Max): 142W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: SOT-227, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1374 pF @ 1000 V.
Weitere Produktangebote GCMS080B120S1-E1 nach Preis ab 24.96 EUR bis 34.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
GCMS080B120S1-E1 | Hersteller : SemiQ |
 Description: SIC 1200V 80M MOSFET & 10A SBD SPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: SOT-227 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1374 pF @ 1000 V |
auf Bestellung 37 Stücke: Lieferzeit 10-14 Tag (e) |
|