Technische Details GCMX003A120S3B1-N SemiQ
Description: 1200V, 3M SIC MOSFET HALF BRIDGE, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2113W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 625A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 41400pF @ 800V, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 300A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1408nC @ 20V, Vgs(th) (Max) @ Id: 4V @ 120mA.
Weitere Produktangebote GCMX003A120S3B1-N
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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GCMX003A120S3B1-N | SemiQ |
 Description: 1200V, 3M SIC MOSFET HALF BRIDGEPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2113W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 625A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 41400pF @ 800V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 300A, 20V Gate Charge (Qg) (Max) @ Vgs: 1408nC @ 20V Vgs(th) (Max) @ Id: 4V @ 120mA |
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Im Einkaufswagen Stück im Wert von UAH |
| GCMX003A120S3B1-N |
|
Hersteller: SemiQ
Description: 1200V, 3M SIC MOSFET HALF BRIDGE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2113W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 625A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 41400pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 300A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1408nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 120mA
Description: 1200V, 3M SIC MOSFET HALF BRIDGE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2113W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 625A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 41400pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 300A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1408nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 120mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH