GCMX003A120S3B1-N SemiQ
Hersteller: SemiQDescription: 1200V, 3M SIC MOSFET HALF BRIDGE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2113W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 625A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 41400pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 300A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1408nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 120mA
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 354.66 EUR |
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Technische Details GCMX003A120S3B1-N SemiQ
Description: 1200V, 3M SIC MOSFET HALF BRIDGE, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2113W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 625A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 41400pF @ 800V, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 300A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1408nC @ 20V, Vgs(th) (Max) @ Id: 4V @ 120mA.
Weitere Produktangebote GCMX003A120S3B1-N nach Preis ab 336.41 EUR bis 394.72 EUR
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GCMX003A120S3B1-N | Hersteller : SemiQ |
MOSFET Modules 1200V, 3mohm, 625A SiC MOSFET Half Bridge Module |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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