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GCMX010A120B3B1P

GCMX010A120B3B1P SemiQ

GCMX010A120B3B1P_rev1.0.pdf Hersteller: SemiQ
Description: SIC 1200V 10M MOSFET HALF-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 577W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 40mA
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+161.08 EUR
10+132.67 EUR
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Technische Details GCMX010A120B3B1P SemiQ

Description: SIC 1200V 10M MOSFET HALF-BRIDGE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 577W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 173A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 800V, Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V, Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V, Vgs(th) (Max) @ Id: 4V @ 40mA.

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GCMX010A120B3B1P GCMX010A120B3B1P Hersteller : SemiQ GCMX010A120B3B1P_rev1_0-3394168.pdf MOSFET Modules SiC 1200V 10mohm MOSFET Half-Bridge Module
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