GCMX020B120S1-E1 SemiQ
Hersteller: SemiQDescription: SIC 1200V 20M MOSFET SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5349 pF @ 1000 V
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 49.02 EUR |
| 10+ | 36.08 EUR |
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Technische Details GCMX020B120S1-E1 SemiQ
Description: SIC 1200V 20M MOSFET SOT-227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 113A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V, Power Dissipation (Max): 395W (Tc), Vgs(th) (Max) @ Id: 4V @ 20mA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 5349 pF @ 1000 V.