auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 60.42 EUR |
| 10+ | 50.51 EUR |
| 100+ | 43.88 EUR |
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Technische Details GCMX080A120B2H1P SemiQ
Description: MOSFET 4N-CH 1200V 27A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 119W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V, Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V, Vgs(th) (Max) @ Id: 4V @ 10mA.
Weitere Produktangebote GCMX080A120B2H1P nach Preis ab 65.95 EUR bis 65.95 EUR
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GCMX080A120B2H1P | Hersteller : SemiQ |
 Description: MOSFET 4N-CH 1200V 27APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 119W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V Vgs(th) (Max) @ Id: 4V @ 10mA |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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