GCMX080A120B2H1P SemiQ
Hersteller: SemiQDescription: MOSFET 4N-CH 1200V 27A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 59.26 EUR |
| 10+ | 43.89 EUR |
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Technische Details GCMX080A120B2H1P SemiQ
Description: MOSFET 4N-CH 1200V 27A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 119W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V, Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V, Vgs(th) (Max) @ Id: 4V @ 10mA.
Weitere Produktangebote GCMX080A120B2H1P nach Preis ab 44.28 EUR bis 62.5 EUR
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GCMX080A120B2H1P | Hersteller : SemiQ |
MOSFET Modules SiC 1200V 80mohm MOSFET Full-Bridge Module |
auf Bestellung 43 Stücke: Lieferzeit 10-14 Tag (e) |
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