GCMX080A120B2T1P SemiQ
Hersteller: SemiQDescription: 1200V 80 SIC MOSFET SIX-PACK MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 103W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 18V
Vgs(th) (Max) @ Id: 4V @ 5mA
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 56.23 EUR |
| 10+ | 41.8 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GCMX080A120B2T1P SemiQ
Description: 1200V 80 SIC MOSFET SIX-PACK MOD, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 103W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V, Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V, Gate Charge (Qg) (Max) @ Vgs: 56nC @ 18V, Vgs(th) (Max) @ Id: 4V @ 5mA.
Weitere Produktangebote GCMX080A120B2T1P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
GCMX080A120B2T1P | Hersteller : SemiQ |
MOSFET Modules 1200V 80ohm SiC MOSFET Six-Pack Module |
Produkt ist nicht verfügbar |