GCMX080A120B2T1P SemiQ
Hersteller: SemiQ
Description: 1200V 80 SIC MOSFET SIX-PACK MOD
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 103W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 18V
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Configuration: 6 N-Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Technische Details GCMX080A120B2T1P SemiQ
Description: 1200V 80 SIC MOSFET SIX-PACK MOD, Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 103W (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Vgs(th) (Max) @ Id: 4V @ 5mA, Gate Charge (Qg) (Max) @ Vgs: 56nC @ 18V, Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V, Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 800V, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Configuration: 6 N-Channel (Phase Leg), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Weitere Produktangebote GCMX080A120B2T1P
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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GCMX080A120B2T1P | SemiQ |
MOSFET Modules 1200V 80ohm SiC MOSFET Six-Pack Module |
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Im Einkaufswagen Stück im Wert von UAH |
| GCMX080A120B2T1P |
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Hersteller: SemiQ
MOSFET Modules 1200V 80ohm SiC MOSFET Six-Pack Module
MOSFET Modules 1200V 80ohm SiC MOSFET Six-Pack Module
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH