GD1400HFY120P2S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 1.4kA, Pulsed collector current: 2.8kA, Electrical mounting: screw, Mechanical mounting: screw, Technology: Advanced Trench FS IGBT, Topology: IGBT half-bridge, Type of semiconductor module: IGBT, Case: P2.0, Max. off-state voltage: 1.2kV, Anzahl je Verpackung: 8 Stücke.