GD15PJX65F1S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A, Electrical mounting: Press-in PCB, Collector current: 15A, Gate-emitter voltage: ±20V, Pulsed collector current: 30A, Max. off-state voltage: 650V, Technology: Trench FS IGBT, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Semiconductor structure: diode/transistor, Case: F1.1, Mechanical mounting: screw, Type of semiconductor module: IGBT.