GD15PJY120F2S STARPOWER SEMICONDUCTOR
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F2.0
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 25 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: F2.0
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Collector current: 15A
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 25 Stücke
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Technische Details GD15PJY120F2S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0, Type of module: IGBT, Semiconductor structure: diode/transistor, Case: F2.0, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Electrical mounting: Press-in PCB, Technology: Advanced Trench FS IGBT, Mechanical mounting: screw, Collector current: 15A, Pulsed collector current: 30A, Max. off-state voltage: 1.2kV, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 25 Stücke.
Weitere Produktangebote GD15PJY120F2S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| GD15PJY120F2S | Hersteller : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0 Type of module: IGBT Semiconductor structure: diode/transistor Case: F2.0 Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB Technology: Advanced Trench FS IGBT Mechanical mounting: screw Collector current: 15A Pulsed collector current: 30A Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V |
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