Produkte > STARPOWER SEMICONDUCTOR > GD15PJY120F5S

GD15PJY120F5S STARPOWER SEMICONDUCTOR

Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1
Electrical mounting: Press-in PCB
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: F5.1
Mechanical mounting: screw
Type of semiconductor module: IGBT

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Technische Details GD15PJY120F5S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1, Electrical mounting: Press-in PCB, Collector current: 15A, Gate-emitter voltage: ±20V, Pulsed collector current: 30A, Max. off-state voltage: 1.2kV, Technology: Advanced Trench FS IGBT, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Semiconductor structure: diode/transistor, Case: F5.1, Mechanical mounting: screw, Type of semiconductor module: IGBT.