GD1600SGX170C3S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw, Electrical mounting: screw, Mechanical mounting: screw, Type of module: IGBT, Technology: Trench FS IGBT, Topology: IGBT x2, Case: C3 130mm, Max. off-state voltage: 1.7kV, Semiconductor structure: common gate; transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 1.6kA, Pulsed collector current: 3.2kA, Anzahl je Verpackung: 8 Stücke.