GD25WD10CK6IGR GigaDevice Semiconductor (HK) Limited


DS-00400-GD25WD05C-Rev1.5.pdf Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1MBIT SPI/DUAL 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (1.5x1.5)
Write Cycle Time - Word, Page: 55µs, 6ms
Memory Interface: SPI - Dual I/O
Access Time: 12 ns
Memory Organization: 128K x 8
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Technische Details GD25WD10CK6IGR GigaDevice Semiconductor (HK) Limited

Description: IC FLASH 1MBIT SPI/DUAL 8USON, Packaging: Tape & Reel (TR), Package / Case: 8-XFDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 1Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 3.6V, Technology: FLASH - NOR (SLC), Clock Frequency: 100 MHz, Memory Format: FLASH, Supplier Device Package: 8-USON (1.5x1.5), Write Cycle Time - Word, Page: 55µs, 6ms, Memory Interface: SPI - Dual I/O, Access Time: 12 ns, Memory Organization: 128K x 8.

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GD25WD10CK6IGR Hersteller : GigaDevice gd25wd10c_rev1_5_20221021-3081628.pdf NOR Flash
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