GD25WD40EK6IGR GigaDevice Semiconductor (HK) Limited


DS-00872-GD25WD40E-Rev1.4.pdf Hersteller: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 4MBIT SPI/DUAL 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 8-USON (1.5x1.5)
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 104 MHz
Memory Format: FLASH
Memory Interface: SPI - Dual I/O
Access Time: 6 ns
Memory Organization: 512K x 8
Write Cycle Time - Word, Page: 100µs, 6ms
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Technische Details GD25WD40EK6IGR GigaDevice Semiconductor (HK) Limited

Description: IC FLASH 4MBIT SPI/DUAL 8USON, Packaging: Tape & Reel (TR), Package / Case: 8-XFDFN Exposed Pad, Mounting Type: Surface Mount, Supplier Device Package: 8-USON (1.5x1.5), Memory Size: 4Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 3.6V, Technology: FLASH - NOR (SLC), Clock Frequency: 104 MHz, Memory Format: FLASH, Memory Interface: SPI - Dual I/O, Access Time: 6 ns, Memory Organization: 512K x 8, Write Cycle Time - Word, Page: 100µs, 6ms.

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GD25WD40EK6IGR Hersteller : GigaDevice gd25wd40e_gd25wd20e_datasheet_rev1_1_20221019-3081635.pdf NOR Flash
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