GD30PJX65F1S STARPOWER
Hersteller: STARPOWERDescription: STARPOWER - GD30PJX65F1S - IGBT-Modul, PIM-Dreiphasen-Eingangsgleichrichter, 46 A, 1.45 V, 123 W, 150 °C, Module
tariffCode: 85412900
productTraceability: No
Kollektor-Emitter-Spannung, max.: 650V
rohsCompliant: YES
Verlustleistung: 123W
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.45V
Betriebstemperatur, max.: 150°C
usEccn: EAR99
Dauer-Kollektorstrom: 46A
Produktpalette: -
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
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Technische Details GD30PJX65F1S STARPOWER
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 30A, Case: F1.1, Type of semiconductor module: IGBT, Max. off-state voltage: 650V, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 30A, Pulsed collector current: 60A, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Technology: Trench FS IGBT, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Anzahl je Verpackung: 25 Stücke.
Weitere Produktangebote GD30PJX65F1S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| GD30PJX65F1S | Hersteller : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 30A Case: F1.1 Type of semiconductor module: IGBT Max. off-state voltage: 650V Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 60A Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Anzahl je Verpackung: 25 Stücke |
Produkt ist nicht verfügbar |
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| GD30PJX65F1S | Hersteller : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 30A Case: F1.1 Type of semiconductor module: IGBT Max. off-state voltage: 650V Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 60A Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge |
Produkt ist nicht verfügbar |