GD600HFY120C6S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB; screw, Semiconductor structure: transistor/transistor, Case: C6 62mm, Gate-emitter voltage: ±20V, Collector current: 600A, Topology: IGBT half-bridge, Type of semiconductor module: IGBT, Technology: Advanced Trench FS IGBT, Mechanical mounting: screw, Pulsed collector current: 1.2kA.